MJ802

MJ802 Silicon NPN Transistor High Power Audio Amplifier TO−3 Type Package Description: The MJ802 is a silicon NPN transistor in a TO3 type case designed for use as an output device in audio amplifiers to 100 watts music power per channel. Features: D High DC Current Gain: hFE = 25 − 100 @ IC = 7.5A D Excellent Safe Operating Area D Complement to the PNP MJ4502 Absolute Maximum Ratings: Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CER IC = 200mA, RBE = 100, Note 1 100 − − V Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1 90 − − V Collector−Base Cutoff Current VCB = 100V, IE = 0 − − 1.0 mA VCB = 100V, IE = 0, TC = +150C − − 5.0 mA VBE = 4V, IC = 0 − − 1.0 mA Emitter−Base Cutoff Current ICBO IEBO Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 7.5A, VCE = 2V 25 − 100 Base−Emitter ON Voltage VBE(on) IC = 7.5A, VCE = 2V − − 1.3 V Collector−Emitter Saturation Voltage VCE(sat) IC = 7.5A, IB = 750mA − − 0.8 V Base−Emitter Saturation Voltage VBE(sat) IC = 7.5A, IB = 750mA − − 1.3 V 2.0 − − MHz Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case