MJE13007

MJE13007 Silicon NPN Transistor High Voltage, High Speed Switch TO−220 Type Package Description: The MJE13007 is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch−mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits. Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Emitter Current, IE Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle  10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 − − V VCEV = 700V, VBE(off) = 1.5V − − 1 mA VCEV = 700V, VBE(off) = 1.5V, TC = +100C − − 5 mA IEBO VEB = 9V, Ic = 0 − − 1 mA hFE IC = 2A, VCE = 5V 8 − 60 IC = 5A, VCE = 5V 5 − 30 IC = 2A, IB = 0.4A − − 1 V IC = 5A, IB = 1A − − 2 V IC = 8A, IB = 2A − − 3 V IC = 5A, IB = 1A, TC = +100C − − 3 V IC = 2A, IB = 0.4A − − 1.2 V IC = 5A, IB = 1A − − 1.6 V IC = 5A, IB = 1A, TC = +100C − − 1.5 V IC = 500mA, VCE = 10V, f = 1MHz 4 − − MHz VCB = −10V, IE = 0, f = 0.1MHz − 110 − pF VCC = 125V, IC = 5A, IB1 = IB2 = 1A, tp = 25s, Duty Cycle  1% − 0.05 0.1 s − 0.8 1.5 s OFF Characteristics (Note 2) Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 10mA, IB = 0 ICEV ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Dynamic Characteristics Current−Gain Bandwidth Product Output Capacitance fT Cob Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts − 1.0 3.0 s Fall Time tf − 0.15 0.7 s − 0.86 2.3 s − 0.14 0.7 s Switching Characteristics (Inductive Load), Clamped Voltage Storage Time tsv Crossover Time tc IC = 5A, Vclamp = 300V, IB1 = 1A, VBE(off) = 5V, TC = +100C Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab