MJE15031

MJE15030 (NPN) & MJE15031 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier TO−220 Type Package Description: The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO−220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter−Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE(sus) IC = 10mA, IB = 0, Note 1 150 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 150V, IB = 0 − − 0.1 mA ICBO VCE = 150V, IE = 0 − − 10 A IEBO VCE = 150V, IC = 0 − − 10 A hFE VCE = 2V, IC = 0.1A 40 − − VCE = 2V, IC = 2A 40 − − VCE = 2V, IC = 0.1A 40 − − VCE = 2V, IC = 0.1A 20 − − VCE from 2V to 20V, IC from 0.1A to 3A − 2 − NPN to PNP − 3 − ON Characteristics (Note 1) DC Current Gain DC Current Gain Linearity hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A − − 0.5 V Base−Emitter ON Voltage VBE(on) VCE = 2V, IC = 1A − − 1 V VCE = 10V, IC = 500mA, ftest = 10MHz, Note 2 30 − − MHz Dynamic Characteristics Current Gain−Bandwidth Product ft Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 2. fT = |hfe|  ftest .420 (10.67) Max .110 (2.79) .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab