MJE172

MJE172 Silicon PNP Transistor Low Power Audio Amp TO−126 Type Package Description: The MJE172 is a silicon PNP transistor in a TO−126 type package designed for low power audio amplifier and low−current, high−speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Current−Gain—Bandwidth Product: fT = 50MHz (Min) @ IC = 100mA D Annular Construction for Low Leakage: ICBO = 100nA (Max) @ VCB = 100V Absolute Maximum Ratings: Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.012W/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.4C/W Electrical Characteristics: (TC = +25C unless otherwise specified)) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V − − 0.1 A − − 0.1 A − − 0.1 A OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 10mA, IB = 0 ICBO VCB = 100V, IE = 0 TC +150C Emitter Cutoff Current IEBO VBE = 7V, IC = 0 Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)) Parameter Symbol Test Conditions Min Typ Max Unit IC = 100mA 50 − 250 IC = 500mA 30 − − IC = 1.5A 12 − − IC = 500mA, IB = 50mA − − 0.3 V IC = 1.5A, IB = 150mA − 0.9 V IC = 3A, IB = 600mA − 1.7 V IC = 1.5A, IB = 150mA − 1.5 V IC = 3A, IB = 600mA − 2.0 V IC = 500mA, VCE = 1V − − 1.2 V IC = 100mA, VCE = 10V, ftest = 10MHz, Note 1 50 − − MHz VCB 10V, IE = 0, f = 0.1MHz − − 60 pF ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Base−Emitter ON Voltage hFE VCE(sat) VBE(sat) VBE(on) VCE = 1V − Dynamic Characteristics Current−Gain−Bandwidth Product Output Capacitance fT Cob Note 1. fT = |hfe|  ftest .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max