MJE180

MJE180 Silicon NPN Transistor Low Power Audio Amp, Low Current, High Speed Switch TO−126 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 10mA, IB = 0 40 − − V VCB = 60V, IB = 0 − − 0.1 A VCB = 60V, IE = 0, TC = 150C − − 0.1 mA IEBO VEB = 7V, IC = 0 − − 0.1 A hFE VCE = 1V, IC = 100mA 50 − 250 VCE = 1V, IC = 500mA 30 − − VCE = 1V, IC = 1.5A 12 − − Off Characteristics Collector−Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ICBO On Characteristics DC Current Gain Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol VCE(sat) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Base−Emitter On Voltage VBE(sat) VBE(on) Test Conditions Min Typ Max Unit IC = 500mA, IB = 50mA − − 0.3 V IC = 1.5A, IB = 150mA − − 0.9 V IC = 3A, IB = 600mA − − 1.7 V IC = 1.5A, IB = 150mA − − 1.5 V IC = 3A, IB = 600mA − − 2.0 V IC = 500mA, VCE = 1V − − 1.2 V VCE = 10V, IC = 100mA, 50 − − MHz VCB = 10V, IE = 0, f = 0.1MHz − − 30 pF Dynamic Characteristics Current−Gain − Bandwidth Product Output Capacitance fT Cob .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max