MJE182

MJE182 Silicon NPN Transistor High Current Switch TO−126LP Type Package Features: D High Current Gain−Bandwidth Product D High DC Current Gain D Fast Switching Time Absolute Maximum Ratings: Collector Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.012W/C Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.4C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − − 1.0 A VCB = 100V, IE = 0 − − 0.1 A VCB = 100V, IE = 0, TC = 150C − − 0.1 A IEBO VEB = 4V, IC = 0 − − 1.0 A hFE VCE = 1V, IC = 100mA 50 − 250 VCE = 1V, IC = 500mA 30 − − VCE = 1V, IC = 1.5A 12 − − Off Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) VEB = 4V, IC = 0 ICBO On Characteristics DC Current Gain Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Base−Emitter On Voltage Symbol VCE(sat) VBE(sat) VBE(on) Test Conditions Min Typ Max Unit IC = 500mA, IB = 50mA − − 0.3 V IC = 1.5A, IB = 150mA − − 0.9 V IC = 3A, IB = 600mA − − 1.7 V IC = 1.5A, IB = 150mA − − 1.5 V IC = 3A, IB = 600mA − − 2.0 V IC = 50mA, VC = 1V − − 1.2 V VCE = 10V, IC = 500mA, ftest = 10MHz 50 − − MHz VCB = 10V, IE = 0, f = 0.1MHz − − 40 pF Dynamic Characteristics Current−Gain − Bandwidth Product Output Capacitance fT Cob .106 (2.7) .315 (8.0) .433 (11.0) E C B .610 (15.5) .094 (2.4)