MJE2955T

MJE2955T (PNP and MJE3055T (NPN) Silicon Complementary Transistors Audio Power Amp, Switch TO−220 Type Package Description: The MJE2955T (PNP) and MJE3055T (NPN) are silicon complementary power transistors in a TO−220 plastic package intended for use in general purpose amplifier and switching applications. Features: D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W Max Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics: (TC = +25C, Note 2 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IB = 0, IC = 200mA, Note 3 60 − − V ICEO IB = 0, VCE = 30V − − 700 A ICEX VCE = 70V, VEB(off) = 1.5V − − 1.0 mA − − 5.0 mA − − 1.0 mA − − 10 mA − − 5 mA OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB = 70V, IE = 0 IC = 0, VBE = 5V TC = +150C TC = +150C Note 2. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise specified. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3. Pulsed; Pulse Duration  300s, Duty Cycle  20%. Electrical Characteristics (Cont’d): (TC = +25C, Note 2 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 4A, VCE = 4V 20 − 100 IC = 10A, VCE = 4V 5 − − IC = 4A, IB = 0.4A − − 1.1 V IC = 10A, IB = 3.3A − − 8.0 V IC = 4A, VCE = 4V − − 1.8 V IC = 0.5A, VCE = 10V, f = 500kHz 2 − − MHz ON Characteristics (Note 3) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter ON Voltage VBE(on) Dynamic Characteristics Current Gain − Bandwidth Product fT Note 2. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise specified. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3. Pulsed; Pulse Duration  300s, Duty Cycle  20%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab