MJE340

MJE340 Silicon NPN Transistor Audio Power Amp, High Voltage Converter TO−126 Type Package Description: The MJE340 is a silicon NPN transistor in a TO−126 type package designed for high−voltage, general purpose applications. Features: D Suitable for Transformerless, Line−Operated Equipment D High Power Dissipation Rating for High Reliability Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25C/W Note 1. Stresses exceeding those listed in the Absolute Maximum ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 300 − − V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0 Collector Cutoff Current ICEO VCB = 300V, IE = 0 − − 100 A Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 100 A hFE IC = 50mA, VCE = 10V 30 − 240 ON Characteristics DC Current Gain .335 (8.5) Max .150 (3.8) .472 (12.0) Max .126 (3.2) Dia .512 (13.0) Min .030 (0.75) E C B .090 (2.3) .110 (2.8) Max