MJE4353

MJE4343 (NPN) & MJE4353 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier TO−3PN Type Package Description: The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Note 1. Pulse Test: Pulse Width  5ms, Duty Cycle  10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 160 − − V VCE = 160V, VEB(off) = 1.5V − − 0.1 mA VCE = 160V, VEB9off) = 1.5V, TC = +150C − − 5.0 mA ICEO VCE = 80V, IB = 0 − − 750 A Emitter−Base Cutoff Current IEBO VBE = 7V, IC = 0 − − 1.0 mA Collector−Base Cutoff Current ICBO VCB = 160V, IE = 0 − − 750 A OFF Characteristics Collector−Emitter Sustaining Voltage Collector−Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 2 ICEX Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 8A 15 35 − VCE = 4V, IC = 16A 8 15 − IC = 8A, IB = 0.8A − − 2.0 V IC = 16A, IB = 2A − − 3.5 V ON Characteristics (Note 2) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 16A, IB = 2A − − 3.9 V Base−Emitter ON Voltage VBE(on) VCE = 4V, IC = 16A − − 3.9 V 1.0 − − MHz − − 800 pF Dynamic Characteristics Current−Gain Bandwidth Product Output Capacitance fT Cob VCE = 20V, IC = 1A, f = 0.5MHz, Note 3 VCB = 10V, IE = 0, f = 0.1MHz Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 3. fT = |hFE| S ftest. .189 (4.8) .614 (15.6) .787 (20.0) .590 (15.0) .138 (3.5) Dia .889 (22.6) B .215 (5.45) C E