MMBTA56

MMBTA56 Silicon PNP Transistor General Purpose Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −500mA Total Device Dissipation (TA = 25C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Note 1. Device mounted on FR−4 PCB 1.6” x 1.56” x 0.06”. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO IC = −1.0mA, IB = 0, Note 1 −80 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = −100A, IE = 0 −80 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = −100A, IC = 0 −4.0 − − V OFF Characteristics Collector Cutoff Current ICEO VCE = −60V, IB = 0 − − −0.1 A ICBO VCB = −80V, IE = 0 − − −0.1 A hFE VCE = −1.0V, IC = −10mA 100 − − VCE = −1.0V, IC = −100mA 100 − − ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = −100mA, IB = −10mA − − −0.2 V Base−Emitter Saturation Voltage VBE(sat) IC = −100mA, VCE = −1.0V − − −1.2 V IC = -100mA, VCE = -1.0V, f = 100MHz 50 − − MHz Small Signal Characteristics Current Gain Bandwidth Product ft Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)