MPSA20

MPSA20 Silicon NPN Transistor General Purpose Amplifier, TO−92 Type Package Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. Maximum Ratings are those values beyond which device damage can occur. Maximum Ratings applied to the device are individual stress level values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur, and reliability may be affected. Note 2. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 3 40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 100A, IC = 0 4 − − V nA Collector Cutoff Current ICBO VCB = 30V, IE = 0 − − 100 hFE IC = 5mA, VCE = 10V, Note 3 40 − 400 IC = 10mA, IB = 1mA − − 0.25 V 125 − − MHz − − 4 pF ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Small−Signal Characteristics Current−Gain − Bandwidth Product Output Capacitance fT Cobo IC = 5mA, VCE = 10V, f = 100MHz, Note 3 VCB = 10V, IE = 0, f = 1 MHz Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2% .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max