MPSA28

MPSA28 Silicon NPN Transistor Darlington, General Purpose Amplifier, TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These are steady state limits and based on a maximum junction temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CES IC = 100A, VBE = 0 80 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 80 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 12 − − V ICBO VCB = 60V, IE = 0 − − 100 nA ICES VCE = 60V, VBE = 0 − − 500 nA IEBO VEB = 10V, IC = 0 − − 100 nA hFE IC = 10mA, VCE = 5V 10,000 − − IC = 100mA, VCE = 5V 10,000 − − IC = 10mA, IB = 0.01mA − − 1.2 V IC = 100mA, IB = 0.1mA − − 1.5 V IC = 100mA, VCE = 5V − − 2.0 V 125 − − MHz − − 8 pF Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter ON Voltage VCE(sat) VBE(on) Small Signal Characteristics Current Gain − Bandwidth Product Output Capacitance fT Cobo IC = 10mA, VCE = 5V, f = 100MHz VCB = 1V, IE = 0, f = 1MHz Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2% C B E .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max