MPSA42

MPSA42 Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 300 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 300 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 100A, IC = 0 5 − − V Collector Cutoff Current ICBO VCB = 200V, IE = 0 − − 0.25 A Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 0.1 A IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V 60 80 75 − − − − 250 − ON Characteristics DC Current Gain hfe Collector−Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA − − 0.2 V Base−Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA − − 0.9 V VCE = 20V, IC = 10mA, f = 30MHz 50 − − MHz Transition Frequency fT Rev. 5−21 .135 (3.43) Min .210 (5.33) Max Seating Plane .019 (0.47) Dia .500 (12.7) Min E B C .105 (2.67) Max .055 (1.4) Max .165 (4.19) Max .2.5 (5.21) Max .105 (2.67) Max