MPSA56

MPSA55 & MPSA56 Silicon PNP Transistor General Purpose Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES MPSA55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V MPSA56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO MPSA55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V MPSA56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Thermal Resistance, Junction−to−Case, RqJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction−to−Ambient, RqJA (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V 80 − − V 4.0 − − V VCE = 60V, IB = 0 − − 0.1 mA VCB = 60V, IE = 0 − − 0.1 mA VCB = 80V, IE = 0 − − 0.1 mA VCE = 1.0V, IC = 10mA 100 − − VCE = 1.0V, IC = 100mA 100 − − OFF Characteristics Collector−Emitter Breakdown Voltage MPSA55 V(BR)CEO IC = 1.0mA, IB = 0, Note 2 MPSA56 Emitter−Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 Collector Cutoff Current ICES Collector Cutoff Current MPSA55 ICBO MPSA56 ON Characteristics DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA − − 0.25 V Base−Emitter Saturation Voltage VBE(on) IC = 100mA, VCE = 1.0V − − 1.2 V Note 1. RqJA is measured with the device soldered into a typical printed circuit board. Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 50 − − MHz Small Signal Characteristics Current Gain Bandwidth Product ft IC = 100mA, VCE = 1V, f = 100Mhz, Note 3 Note 3. ft is defined as the frequency at which |hfe| extrapolates to unity. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max