MPSA64

MPSA64 Silicon PNP Transistor Darlington Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −10V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −1.2A Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −30 − − V OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CES IC = −100A, IB = 0 Collector Cutoff Current ICBO VCB = −30V, IE = 0 − − −100 nA Emitter Cutoff Current IEBO VEB = −10V, IC = 0 − − −100 nA hFE VCE = −5.0V, IC = −10mA 10,000 − − VCE = −5.0V, IC = −100mA 20,000 − − ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = −100mA, IB = −0.1mA − − −1.5 V Base−Emitter Saturation Voltage VBE(sat) IC = −100mA, VCE = −5.0V − − −2.0 V 125 − − MHz Small Signal Characteristics Current Gain Bandwidth Product ft IC = -10mA, VCE = -5.0V, f = 100MHz Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max