MPSA93

MPSA92 & MPSA93 Silicon PNP Transistors High Voltage, General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO MPSA93 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V MPSA92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector−Base Voltage, VCBO MPSA93 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V MPSA92 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation @ TA = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation @ TC = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/mW Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/mW Note 1. Stresses exceeding Absolute Maximum ratings may damage the device. Absolute Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage MPSA92 V(BR)CEO IC = 1mA, IB = 0, Note 2 MPSA93 Collector−Base Breakdown Voltage MPSA92 300 200 − − − − V V V(BR)CBO IC = 100A, IE = 0 300 200 5 − − − − − − V V V − − − − − − 0.25 0.25 0.1 A A A MPSA93 Emitter−Base Breakdown Voltage Collector Cutoff Current MPSA92 MPSA93 Emitter Cutoff Current V(BR)EBO IE = 100A, IC = 0 ICBO VCB = 200V, IE = 0 IEBO VCB = 160V, IE = 0 VEB = 3V, IC = 0 Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain hFE IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V 25 40 25 − − − − − − IC = 20mA, IB = 2mA − − − − − − 0.5 0.4 0.9 V V V IC = 10mA, VCE = 20V, f = 100MHz 50 − − MHz VCB = 20V, IE = 0, f = 1MHz − − − − 6 8 pF pF Collector−Emitter Saturation Voltage MPSA92 VCE(sat) IC = 20mA, IB = 2mA MPSA93 Base−Emitter Saturation Voltage VBE(sat) Small−Signal Characteristics Current Gain − Bandwidth Product Collector−Base Capacitance MPSA92 fT Ccb MPSA93 Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max