MPSL51

MPSL51 Silicon PNP Transistor High Voltage, General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation @ TA = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation @ TC = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C/mW Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3C/mW Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 100 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 100 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 4 − − V Collector Cutoff Current ICBO VCB = 50V, IE = 0 − − 1 A Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 100 nA Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage IC = 50mA, VCE = 5V 40 − 250 VCE(sat) IC = 10mA, IB = 1mA − − 0.25 V IC = 50mA, IB = 5mA − − 0.30 V IC = 10mA, IB = 1mA − − 1.2 V IC = 50mA, IB = 5mA − − 1.2 V IC = 10mA, VCE = 10V, f = 20MHz 60 − − MHz VCB = 10V, IE = 0, f = 1MHz − − 8 pF IC = 1mA, VCE = 10V, f = 1kHz 20 − − VBE(sat) Small−Signal Characteristics Current Gain − Bandwidth Product Output Capacitance fT Cobo Small−Signal Current Gain hfe Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max