NTE102

NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver TO−5 / TO−39 Type Package Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium−speed saturated switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter−Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20A Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +100C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +100C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Base Breakdown Voltage V(BR)CBO IC = 20A, IE = 0 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 20A, IC = 0 12 − − V Punch−Through Voltage VPT VEBfl = 1V, Note 1 24 − − V Collector Cutoff Current ICBO VCB = 12V, IE = 0 − 0.8 5.0 A VCB = 12V, IE = 0, TA = +80C − 20 90 A VEB = 2.5V, IC = 0 − 0.5 2.5 A Emitter Cutoff Current IEBO Note 1. VPT is determined by measuring the Emitter−Base floating potential VEBfl, using a voltmeter with 11M minimum input impedance. The Collector−Base Voltage, VCB, is increased until VEBfl = 1V; this value of VCB = (VPT + 1). Rev. 3−21 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 150mV, IC = 12mA 30 80 − VCE = 200mV, IC = 24mA 24 90 − IC = 12mA, IB = 0.4mA − 0.09 0.15 V IC = 24mA, IB = 1mA − 0.09 0.20 V IC = 12mA, IB = 0.4mA − 0.27 0.35 V IC = 24mA, IB = 1mA − 0.30 0.40 V ON Characteristics DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Voltage VBE Small−Signal Characteristics Alpha Cutoff Frequency fhfb VCB = 6V, IE = 1mA 4 25 − MHz Output Capacitance Cob VCB = 6V, IE = 1mA, f = 1MHz − 8 20 pF Input Impedance hie VCE = 6V, IE = 1mA, f = 1MHz − 3.6 − k Voltage Feedback Ratio hre − 8 − x 10−4 Small−Signal Current Gain hfe − 135 − Output Admittance hoe − 50 − mhos Delay Time td − 0.07 − s Rise Time tr − 0.12 − s Storage Time ts − 0.20 − s Fall Time tf − 0.10 − s Qsb − 300 1400 pC Switching Characteristics Stored Base Charge .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Base Emitter Collector 45 .031 (.793)