NTE104MP

NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage (RBE = 68Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Power Dissipation (TC ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C Note 1. Matched pairs are available upon request (NTE104MP). Matched pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Breakdown Voltage V(BR)CER Test Conditions Min Typ Max Unit IC(peak) = –0.6A, RBE = 68Ω 35 – – V mA Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 1.0 DC Current Gain hFE VCE = 2V, IC = 20mA 50 90 165 Base–Emitter Input Voltage VBE VCE = 2V, IC = 1A – 0.38 – V VCE(sat) IC = 4A, IB = 0.4A – 0.29 – V fT VCB = 2V, IE = 1A – 300 – kHz Collector–Emitter Saturation Voltage Transition Frequency .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case