NTE121
Germanium PNP Transistor
Audio Frequency Power Amplifier
Description:
The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an
audio frequency power output amplifier.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage (RBE = 68Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (TC ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C
Note 1. Matched pairs are available upon request (NTE121MP). Matched pairs have their gain
specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector−Emitter Breakdown Voltage
V(BR)CER
Test Conditions
Min
Typ
Max
Unit
IC(peak) = −0.6A, RBE = 68Ω
45
−
−
V
mA
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
−
−
0.5
DC Current Gain
hFE
VCE = 2V, IC = 1A
50
90
165
Base−Emitter Input Voltage
VBE
VCE = 2V, IC = 1A
−
0.38
−
V
VCE(sat)
IC = 10A, IB = 1A
−
0.3
−
V
fT
VCB = 2V, IE = 1A
−
300
−
kHz
Collector−Emitter Saturation Voltage
Transition Frequency
Rev. 8−12
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.215 (5.45)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
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