NTE126A

NTE126A Germanium Mesa Transistor, PNP, for High−Speed Switching Applications TO−18 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Vdc Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Vdc Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +100C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +100C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage BVCBO IC = 100A, IE = 0 25 − − V Emitter−Base Breakdown Voltage BVEBO IE = 100A, IC = 0 3 − − V Collector−Latch−Up Voltage LVCEX VCC = 11.5 V 11.5 − − V Collector−Emitter Cutoff Current ICES VCE = 15V − − 100 A Collector−Base Cutoff Current ICBO VCB = 6V, IE = 0 − − 3.0 A DC Current Gain hFE IC = 10mA, VCE = 0.3V 40 − − IC = 50mA, VCE = 1V 40 − − IC = 100mA, VCE = 1V 40 − − IC = 10mA, IB = 1mA − − 0.18 IC = 50mA, IB = 5mA − − 0.35 IC = 100mA, IB = 10mA − − 0.60 Collector−Emitter Saturation Voltage VCE(sat) V Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Base−Emitter Saturation Voltage Current−Gain−Bandwidth Product Symbol VBE(sat) fT Test Conditions Min Typ Max Unit IC = 10mA, IB = 1mA 0.30 − 0.50 V IC = 50mA, IB = 5mA 0.40 − 0.75 IC = 100mA, IB = 10mA 0.40 − 1.00 IE = 20mA, VCB = 1.0Vdc, f = 100MHz 300 − − MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − − 4.0 pF Emitter Transition Capacitance CTe VEB = 1V − − 3.5 pF Turn−On Time ton IC = 10mA, IB1 = 5mA, VBE(off) = 1.25V − − 50 ns IC = 100mA, IB1 = 5mA, VBE(off) = 1.25V − − 50 IC = 10mA, IB1 = 1mA, IB2 = 0.25mA − − 85 IC = 100mA, IB1 = 5mA, IB2 = 1.25mA − − 85 IC = 10mA, IB = 1mA − − 80 IC = 100mA, IB = 5mA − − 125 Turn−Off Time Total Control Charge toff QT .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45 .041 (1.05) ns pC