NTE129MCP

NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TA = +25°C), PD NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6mW/°C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.15mW/°C Total Device Dissipation (TC = +25°C), PD NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5°C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W Thermal Resistance, Junction–to–Ambient, RthJA NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.5°C/W NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300°C Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP). Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 30mA, IB = 0 80 – – V IC = 10mA 80 – – V IC = 100µA, IE = 0 140 – – V IC = 10µA 80 – – V IE = 100µA, IC = 0 7 – – V IE = 10µA 5 – – V VCB = 90V, IE = 0 – – 0.01 µA VCB = 90V, IE = 0, TA = +150°C – – 10 µA VCB = 60V – – 50 nA VCB = 60V, TA = +150°C – – 50 µA VBE = 5V, IC = 0 – – 0.010 µA VBE = 5V – – 10 µA IC = 0.1mA, VCE = 10V 50 – – IC = 10mA, VCE = 10V 90 – – IC = 150mA, VCE = 10V 100 – 300 IC = 150mA, VCE = 10V, TC = –55°C 40 – – IC = 500mA, VCE = 10V 50 – – IC = 1.0A, VCE = 10V 15 – – IC = 100µA, VCE = 5V 75 – – IC = 100mA, VCE = 5V 100 – 300 IC = 100mA, VCE = 5V, TC = –55°C 40 – – IC = 500mA, VCE = 5V 70 – – IC = 1.0A, VCE = 5V 25 – – IC = 150mA, IB = 15mA – – 0.2 V IC = 500mA, IB = 50mA – – 0.5 V IC = 150mA, IB = 15mA – – 0.15 V IC = 500mA, IB = 50mA – – 0.5 V IC = 150mA, IB = 15mA – – 1.1 V – – 0.9 V – – 1.1 V OFF Characteristics Collector–Emitter Breakdown Voltage NTE128 V(BR)CEO NTE129 Collector–Base Breakdown Voltage NTE128 V(BR)CBO NTE129 Emitter–Base Breakdown Voltage NTE128 V(BR)EBO NTE129 Collector Cutoff Current NTE128 ICBO NTE129 Emitter Cutoff Current NTE128 IEBO NTE129 ON Characteristics (Note 2) DC Current Gain NTE128 hFE NTE129 Collector–Emitter Saturation Voltage NTE128 VCE(sat) NTE129 Base–Emitter Saturation Voltage NTE128 VBE(sat) NTE129 Base–Emitter ON Voltage (NTE129 Only) VBE(on) IC = 500mA, VCE = 500mV Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%. Electrical Characteristics (Cont’d): TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 – 400 MHz VCB = 10V, IE = 0, f = 1MHz – – 12 pF VCE = 10V, f = 1MHz – – 20 pF VBE = 500mV, IC = 0, f = 1MHz – – 60 pF VEB = 500mV, f = 1MHz – – 110 pF IC = 1mA, VCE = 5V, f = 1kHz 80 – 400 IC = 50mA, VCE = 10V, f = 100MHz 1 – 4 IE = 10mA, VCB = 10V, f = 79.8MHz – – 400 ps IC = 100µA, VCE = 10V, RS = 1kΩ, f = 1kHz – – 4 dB Small–Signal Characteristics Current–Gain – Bandwidth Product (NTE128 Only) Output Capacitance NTE128 fT Cobo NTE129 Input Capacitance NTE128 Cibo NTE129 Small–Signal Current Gain NTE128 hfe NTE129 Collector–Base Time Constant (NTE128 Only) Noise Figure (NTE128 Only) rb′Cc NF IC = 50mA, VCE = 10V, f = 20MHz Switching Characteristics (NTE129 Only) Storage Time ts IC = 500mA, IB1 = IB2 = 50mA – – 350 ns Turn–On Time ton IC = 500mA, IB1 = 50mA – – 100 ns IC = 500mA, IB1 = IB2 = 50mA – – 50 ns Fall Time tf .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)