NTE130MP

NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 – 70 @ IC = 4A D Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52°C/W Electrical Characteristics: (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 60 – – V Collector–Emitter Sustaining Voltage VCER(sus) IC = 200mA, RBE = 100Ω, Note 1 70 – – V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 30V, IB = 0 – – 0.7 mA ICEX VCE = 100V, VBE(off) = 1.5V – – 1.0 mA VCE = 100V, VBE(off) = 1.5V, TC = +150°C – – 5.0 mA VBE = 7V, IC = 0 – – 5.0 mA IEBO Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 4A, VCE = 4V 20 – 70 IC = 10A, VCE = 4V 5 – – IC = 4A, IB = 400mA – – 1.1 V IC = 10A, IB = 3.3A – – 3.0 V IC = 4A, VCE = 4V – – 1.5 V ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter ON Voltage VBE(on) Second Breakdown Second Breakdown Collector Current with Base Forward Biased Is/b VCE = 40V, t = 1.0s; Nonrepetitive 2.87 – – A Current Gain–Bandwidth Product fT IC = 500mA, VCE = 10V, f = 1MHz 2.5 – – MHz Small–Signal Current Gain hfe IC = 1A, VCE = 4V, f = 1kHz 15 – 120 Small–Signal Current Gain Cutoff Frequency fhfe VCE = 4V, IC = 1A, f = 1kHz 10 – – Dynamic Characteristics kHz Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case