NTE131MP

NTE131 (PNP) & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICEV VCE = 32V, VEB = 1V – – 1 mA Emitter Cutoff Current IEBO VEB = 10V, IC = 0 – – 1 mA DC Current Gain hFE1 VCB = 0, IE = 100mA 35 – 170 hFE2 VCB = 0, IE = 1A 36 – 185 Common–Emitter Cutoff Frequency fαe VCB = 2V, IE = 100mA 10 15 – kHz Base–Emitter ON Voltage VBE VCB = 0, IE = 1A – 0.4 – V IC = 1A, IB = 100mA – 0.08 – V Collector–Emitter Saturation Voltage VCE(sat) .593 (15.08) Dia .290 (7.36) .031 (.792) .039 (1.0) Dia .295 (7.5) .944 (24.0) Base .530 (13.5) .157 (4.0) Dia (2 Places) .315 (8.0) Collector/Case Emitter