NTE157

NTE157 Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39) Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: D Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA D Current–Gain – Bandwidth Product: fT = 10MHz (Min) @ IC = 50mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction to case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA (Inductive), L = 50mH 300 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 300 – – V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 200V, IB = 0 – – 0.1 mA ICEX VCE = 300V, VEB(off) = 1.5V – – 0.1 mA VCE = 300V, VEB(off) = 1.5V, TC = +100°C – – 1.0 mA ICBO VCB = 325V, IE = 0 – – 10 µA IEBO VEB = 6V, IC = 0 – – 10 µA Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 50mA, VCE = 10V 25 – – IC = 100mA, VCE = 10V 30 – 250 IC = 250mA, VCE = 10V 15 – – IC = 500mA, VCE = 10V 5 – – IC = 100mA, IB = 10mA – – 1 IC = 250mA, IB = 25mA – – 2.5 IC = 500mA, IB = 100mA – – 10 IC = 100mA, VCE = 10V – – 1 V IC = 50mA, VCE = 10V, f = 10MHz, Note 2 10 – – MHz pF ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Voltage VBE V Dynamic Characteristics Current–Gain–Bandwidth Product fT Output Capacitance Cob VCB = 10V, IE = 0, f = 100kHz – – 25 Small–Signal Current Gain hfe IC = 100mA, VCE = 10V, f = 1kHz 20 – – Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max