NTE159-10

NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Thermal Resistance, Junction to Case, RθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction to Ambient, RθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐ plementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 80 - - V Collector-Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 80 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 5 - - V VCB = 50V, IE = 0 - - 50 nA VCB = 50V, IE = 0, TA = +75°C - - 5 μA - - 100 nA VCE = 10V, IC = 100μA 25 - - VCE = 10V, IC = 1mA 40 - - VCE = 10V, IC = 10mA 50 - 250 VCE = 10V, IC = 100mA 40 - - VCE = 10V, IC = 500mA 30 - - IC = 150mA, IB = 15mA - - 0.15 V IC = 500mA, IB = 50mA - - 0.5 V IC = 150mA, IB = 15mA - - 0.9 V IC = 500mA, IB = 50mA - - 1.1 V Collector Cutoff Current Emitter Cutoff Current ICBO IEBO ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance Cob VCB = 20V, IE = 0, f = 1MHz - - 30 pF Input Capacitance Cib VBE = 500mV, f = 1MHz - - 110 pF Small-Signal Current Gain hfe IC = 500mA, VCE = 10V, f = 100MHz 1 - 5 Noise Figure NF IC = 100mA, VCE = 10V, RS = 1kΩ, f = 1kHz, BW = 1Hz - - 3 dB Turn-On Time ton - - 100 ns Turn-Off Time toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA - - 400 ns Switching Characteristics .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max