NTE159M

NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: D Low Collector Saturation Voltage: 1V (Max) D High Current Gain–Bandwidth Product: fT = 300MHz (Min) @ IC 20mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Base Voltage, VCBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/°C Total Device Dissipation (TC = +25°C), PD NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/°C NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/°C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 40 – – V 60 – – V 75 – – V 60 – – V 6 – – V 5 – – V VCE = 60V, VEB(off) = 3V – – 10 nA VCE = 30V, VBE = 500mV – – 50 nA VCB = 60V, IE = 0 – – 0.01 µA VCB = 60V, IE = 0, TA = +150°C – – 10 µA VCB = 50V, IE = 0 – – 0.01 µA VCB = 50V, IE = 0, TA = +150°C – – 10 µA VEB = 3V, IC = 0 – – 10 nA VCE = 60V, VEB(off) = 3V – – 20 nA VCE = 30V, VEB(off) = 500mV – – 50 nA VCE = 10V IC = 0.1mA, Note 1 35 – – IC = 1mA 50 – – IC = 10mA, Note 1 75 – – IC = 10mA, TA = –55°C 35 – – IC = 150mA, Note 1 100 – 300 VCE = 1V, IC = 150mA, Note 1 50 – – VCE = 10V IC = 500mA, Not e 1 40 – – IC = 0.1mA 75 – – IC = 1mA 100 – – IC = 10mA 100 – – IC = 150mA, Note 1 100 – 300 IC = 500mA, Note 1 50 – – IC = 150mA, IB = 15mA, Note 1 – – 0.3 V IC = 500mA, IB = 50mA, Note 1 – – 1.0 V IC = 150mA, IB = 15mA, Note 1 – – 0.4 V IC = 500mA, IB = 50mA, Note 1 – – 1.6 V OFF Characteristics Collector–Emitter Breakdown Voltage NTE123A V(BR)CEO IC = 10mA, IB = 0 NTE159M Collector–Base Breakdown Voltage NTE123A V(BR)CBO IC = 10µA, IE = 0 NTE159M Emitter–Base Breakdown Voltage NTE123A V(BR)EBO IE = 10µA, IC = 0 NTE159M Collector Cutoff Current NTE123A ICEX NTE159M Collector Cutoff Current NTE123A ICBO NTE159M Emitter Cutoff Current (NTE123A Only) Base Cutoff Current NTE123A IEBO IBL NTE159M ON Characteristics DC Current Gain NTE123A hFE NTE159M Collector–Emitter Saturation Voltage NTE123A NTE159M VCE(sat) Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 150mA, IB = 15mA, Note 1 0.6 – 1.2 V IC = 500mA, IB = 50mA, Note 1 – – 2.0 V IC = 150mA, IB = 15mA, Note 1 – – 1.3 V IC = 500mA, IB = 50mA – – 2.6 V 300 – – MHz 200 – – MHz VCB = 10V, IE = 0, f = 100kHz – – 8 pF VBE = 0.5V IC = 0, f = 100kHz – – 25 pF VBE = 2V – – 30 pF 2.0 – 8.0 kΩ 0.25 – 1.25 kΩ – – 8 x 10–4 – – 4 x 10–4 50 – 300 75 – 375 5 – 35 µmhos IC = 10mA 25 – 200 µmhos IE = 20mA, VCB = 20V, f = 31.8MHz – – 150 ps ON Characteristics (Cont’d) Base–Emitter Saturation Voltage NTE123A VBE(sat) NTE159M Small–Signal Characteristics Current Gain–Bandwidth Product NTE123A fT NTE159M IC = 50mA Output Capacitance Cobo Input Capactiance NTE123A Cibo NTE159M Input Impedance (NTE123A Only) IC = 20mA hie IC = 1mA VCE = 20V, f = 100MHz, Note 2 VCE = 10V, f = 1kHz IC = 10mA Voltage Feedback Ratio (NTE123A Only) hre Small–Signal Current Gain (NTE123A Only) hfe Output Admittance (NTE123A Only) hoe IC = 1mA VCE = 10V, f = 1kHz IC = 10mA IC = 1mA VCE = 10V, f = 1kHz IC = 10mA IC = 1mA VCE = 10V, f = 1kHz Collector–Base Time Constant (NTE123A Only) rb′Cc Noise Figure (NTE123A Only) NF IC = 100µA, VCE = 10V, RS = 1kΩ, f = 1kHz – – 4 dB Re(hie) IC = 20mA, VCE = 20V, f = 300MHz – – 60 Ω VCC = 30V, VBE(off) = 500mV, IC = 150mA, IB1 =– 15mA – – 10 ns – – 25 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA – – 225 ns – – 60 ns VCC = 30V, IC = 150mA, IB1 = 15mA – 26 45 ns – 6 10 ns – 20 40 ns – 70 100 ns – 50 80 ns – 20 30 ns Real Part of Common–Emitter High Frequency Input Impedance (NTE123A Only) Switching Characteristics NTE123A Delay Time td Rise Time tr Storage Time ts Fall Time tf NTE159M Turn–On Time ton Delay Time td Rise Time tr Turn–Off Time toff Storage Time ts Fall Time tf VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45° .041 (1.05)