NTE159MCP

NTE159MCP Silicon Matched Complementary Transistors (Contains NTE123AP (NPN) and NTE159 (PNP)) Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO NTE123AP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO NTE123AP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE159 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO NTE123AP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE159 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC NTE123AP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA NTE159 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 1mA, IB = 0, Note 2 40 − − V IC = 10A, IB = 0, Note 2 80 − − V 60 − − V 80 − − V 6 − − V IE = 10A, IC = 0 5 − − V ICEV VCE = 35V, VEB(off) = 0.4V − − 0.1 A ICBO VCB = 50V, IE = 0 − − 50 nA VCB = 50V, IE = 0, TA = +75C − − 5 A VCE = 35V, VEB(off) = 0.4V − − 0.1 A − − 100 nA VCE = 1V, IC = 0.1mA 20 − − VCE = 1V, IC = 1mA 40 − − VCE = 1V, IC = 10mA 80 − − VCE = 1V, IC = 150mA 100 − 300 VCE = 1V, IC = 500mA 40 − − VCE = 10V, IC = 100A 25 − − VCE = 10V, IC = 1mA 40 − − VCE = 10V, IC = 10mA 50 − 250 VCE = 10V, IC = 100mA 40 − − VCE = 10V, IC = 500mA 30 − − IC = 150mA, IB = 15mA − − 0.4 V − − 0.15 V − − 0.75 V − − 0.5 V 0.75 − 0.95 V − − 0.9 V − − 1.2 V − − 1.1 V OFF Characteristics Collector−Emitter Breakdown Voltage NTE123AP NTE159 Collector−Base Breakdown Voltage NTE123AP V(BR)CBO IC = 0.1mA, IE = 0 NTE159 Emitter−Base Breakdown Voltage NTE123AP IC = 10A, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 NTE159 Collector Cutoff Current NTE123AP NTE159 Base Cutoff Current NTE123AP ONLY IBEV Emitter Cutoff Current NTE159 ONLY IEBO ON Characteristics (Note 2) DC Current Gain NTE123AP hFE NTE159 Collector−Emitter Saturation Voltage NTE123AP VCE(sat) NTE159 NTE123AP IC = 500mA, IB = 50mA NTE159 Base−Emitter Saturation Voltage NTE123AP VBE(sat) IC = 150mA, IB = 15mA NTE159 NTE123AP IC = 500mA, IB = 50mA NTE159 Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 20mA, VCE = 10V, f = 100MHz 250 − − MHz Small−Signal Characteristics (NTE123AP) Current Gain−Bandwidth Product fT Collector−Base Capacitance Ccb VCB = 5V, IE = 0, f = 100kHz − − 6.5 pF Emitter−Base Capacitance Ceb VCB = 0.5V, IC = 0, f = 100kHz − − 30 pF Input Impedance hie IC = 1mA, VCE = 10V, f = 1kHz 1.0 − 15 k Voltage Feedback Ratio hre IC = 1mA, VCE = 10V, f = 1kHz 0.1 − 8.0 x 10−6 Small−Signal Current Gain hfe IC = 1mA, VCE = 10V, f = 1kHz 40 − 500 Output Capacitance Cob VCB = 20V, IE = 0, f = 1MHz − − 30 pF Input Capacitance Cib VCB = 500mV, f = 1MHz − − 110 pF Small−Signal Current Gain hfe IC = 500mA, VCE = 10V, f = 100MHz 1 − 5 Noise Figure NF IC = 100mA, VCE = 10V, RS = 1k, f = 1kHz, BW = 1Hz − − 3 dB VCC = 30V, VEB(off) = 2V, IC = 150mA, IB1 = 15mA − − 15 ns − − 20 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA − − 225 ns − − 30 ns VCC = 30V, IC = 500mA, IB1 = IB2 = 15mA − − 100 ns − − 400 ns Small−Signal Characteristics (NTE159) Switching Characteristics (NTE123AP) Delay Time td Rise Time tr Storage Time ts Fall Time tf Switching Characteristics (NTE159) Turn−On Time ton Turn−Off Time toff .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .100 (2.54) .021 (.445) Dia Max E B C .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max