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NTE16001

NTE16001

  • 厂商:

    NTE

  • 封装:

    SIP3

  • 描述:

    TRANS NPN 35V 50MA 3SIP

  • 数据手册
  • 价格&库存
NTE16001 数据手册
NTE16001 Silicon NPN Transistor Video IF Amp Features: D High Transistion Frequency D Good Linearity of DC Current Gain D An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly Mounted Flush to PC Board Surface. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICEO VCE = 20V, IB = 0 – – 10 µA Collector–Base Voltage VCBO IC = 10µA, IE = 0 45 – – V Collector–Emitter Voltage VCEO IC = 1mA, IB = 0 35 – – V Emitter–Base Voltage VEBO IE = 10µA, IC = 0 4 – – V VCB = 10V, IE = –10mA 20 50 100 IC = 20mA, IB = 2mA – – 0.5 V 300 500 – MHz DC Current Gain Collector–Emitter Saturation Volatge Transistion Frequency hFE VCE(sat) fT VCB = 10V, IE = –10mA, f = 100MHz Small–Signal Reverse Transfer Capacitance Cre VCE = 10V, IC = 1mA – – 1.5 pF Power Gain PG VCB = 10V, IE = –10mA, f = 58MHz – 18 – dB .271 (6.9) .098 (2.5) .137 (3.5) B C .177 (4.5) E .039 (1.0) .039 (1.0) .122 (3.1) .098 (2.5) .161 (4.1)
NTE16001 价格&库存

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