NTE163A

NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V D Switching Times With Inductive Loads: tf = 0.4µs (Typ) @ IC = 4.5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Peak Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Device Dissipation (TC = +95°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Derate Above 95°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +115°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +115°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6°C/W Maximum Lead Temperature (For Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . . . . +275°C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 700 – – V Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 1.0 mA Emitter–Base Voltage VEBO IE = 10mA, IC = 0 5 – – V 2.25 – – ON Characteristics (Note 2) DC Current Gain hFE IC = 4.5A, VCE = 5V Collector–Emitter Saturation Voltage VCE(sat) IC = 4.5A, IB = 2A – – 5 V Base–Emitter Saturation Voltage VBE(sat) IC = 4.5A, IB = 2A – – 1.5 V IC = 100mA, VCE = 5V, f = 1MHz – 4 – MHz VCB = 10V, IE = 0, f = 1MHz – 125 – pF IC = 4.5A, IB = 1.8A, LB = 10µH – 0.6 – µs Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance fT Cob Switching Characteristics Fall Time tf Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2% .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case