NTE165

NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability Applications: D Consumer D Power Supply D Color TV Horizontal Deflection Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Base Current (Peak), IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Power Dissipation (TC ≤ +95°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +115°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +115°C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Symbol ICES Test Conditions VCE = 1500V, VBE = 0 V(BR)EBO IE = 1mA, IC = 0 hFE VCE(sat) VCE = 5V, IC = 4.5A IC = 4.5A, IB = 2A Min Typ Max Unit − − 1.0 mA 5 − − V 2.25 − − − − 5 V Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Base−Emitter Saturation Voltage VBE(sat) IC = 4.5A, IB = 2A − − 1.5 V Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, L = 25mH 700 − − V IE = 10mA, IC = 0 10 − − V VCE = 5V, IC = 100mA − 7 − MHz VCB = 10V, IE = 0, f = 1MHz − 125 − pF Emitter−Base Voltage VEBO Transition Frequency fT Collector Output Capacitance Cob Switching Characteristics Storage Time ts IC = 4.5A (Peak), IB(end) = 1.8A − 0.7 − µs Fall Time tf IC = 4.5A (Peak), IB(end) = 1.8A − 10 − µs .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case