NTE175

NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D TO66 Type Package D Collector−Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector−Base Voltage, VCB NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Vdc Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5°C/W Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 350 − − V 300 − − V 400 − − V 375 − − V OFF Characteristics (Note 2) Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0 NTE38 NTE175 Collector−Emitter Sustaining Voltage VCEX(sus) IC = 200mA, VBE = −1.5V, L = 10mH NTE38 Only VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω Emitter−Base Breakdown Voltage NTE38 Only VEBO IE = 0.5mA, IC = 0 6 − − V Collector Cutoff Current ICEO VCE = 150V, IB = 0 − − 5 mA Collector Cutoff Current NTE38 ICEV VCE = 250V, VBE(off) = 1.5V − − 0.5 mA VCE = 250V, VBE(off) = 1.5V, TC = +100°C − − 5.0 mA VCE = 315V, VBE(off) = 1.5V − − 0.5 mA VCE = 315V, VBE(off) = 1.5V, TC = +100°C − − 5.0 mA VCE = 360V, VBE(off) = 1.5V − − 0.5 mA VCE = 360V, VBE(off) = 1.5V, TC = +100°C − − 5.0 mA VCE = 450V, VBE(off) = 1.5V − − 1.0 mA VCE = 300V, VBE(off) = 1.5V, TC = +150°C − − 3.0 mA IEBO VEB = 6V, IC = 0 − − 0.5 mA hFE IC = 1A, VCE = 4V 10 − 100 IC = 0.1A, VCE = 10V 40 − − IC = 1A, VCE = 2V 8 − 80 IC = 1A, VCE = 10V 25 − 100 IC = 1A, IB = 125mA − − 2.0 V − − 0.75 V IC = 1A, IB = 125mA − − 1.4 IC = 1A, IB = 100mA − − 1.4 V IC = 1A, VCE = 10V − − 1.4 V IC = 200mA, VCE = 10V, ftest = 5MHz, Note 3 20 − − MHz 15 − − MHz VCB = 10V, IE = 0, f = 1MHz − − 120 pF NTE175 Emitter Cutoff Current ICEX ON Characteristics (Note 2) DC Current Gain NTE38 NTE175 Collector−Emitter Saturation Voltage NTE38 VCE(sat) NTE175 Base−Emitter Saturation Voltage NTE38 VBE(sat) NTE175 Base−Emitter ON Voltage NTE175 Only VBE(on) V Dynamic Characteristics Current Gain −Bandwidth Product NTE38 fT NTE175 Output Capacitance (NTE175 Only) Cob Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Note 3. fT = |hfe|  ftest Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit t = 1s (Non−Repetitive), VCE = 40V 875 − − mA VCE = 100V 350 − − mA − − 0.6 μs − − 2.5 μs − − 0.6 μs IB1 = 100mA, RL = 200Ω − − 3.0 μs IB1 = IB2 = 100mA − − 4.0 μs − − 3.0 μs Second Breakdown Second Breakdown Collector Current NTE38 IS/b NTE175 Switching Characteristics NTE38 Rise Time tr Storage Time ts Fall Time tf NTE175 Rise Time tr Storage Time ts Fall Time tf VCC = 200V, IC = 1A IB1 = IB2 = 125mA VCC = 200V, IC = 1A .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter