NTE179MP

NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.5V (Max) @ IC = 5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter–Base Volatge, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106W Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 110°C Storage Junction Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 110°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W Electrical Characteristics: (TA = +25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 100mA, IB = 0 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 2 – – V Collector–Emitter Sustaining Voltage VCE(sus) IC = 5A 40 – – V ICBO VCB = 2V, IE = 0 – – 200 µA ICEX VCE = 90V, VBE(off) = 0.2V – – 20 mA ICER VCE = 50V, REB = 100Ω – – 10 mA Collector Cutoff Current Collector–Emitter Cutoff Current Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1A, VCE = 2V 65 – 300 IC = 5A, VCE = 2V 55 – – ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 100mA – – 0.5 V Base–Emitter ON Voltage VBE(on) IC = 1A, VCE = 2V – – 0.45 V IC = 5A, VCE = 2V – – 0.60 V 500 – – kHz Dynamic Characteristics Current Gain–Bandwidth Product fT IC = 500mA, VCE = 10V .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case