NTE180

NTE180 (PNP) & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: D High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W Electrical Characteristics: (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CER IC = 200mA, RBE = 100Ω, Note 1 100 – – V Collector–Emitter Sustaining Voltage 90 – – V VCB = 100V, IE = 0 – – 1.0 mA VCB = 100V, IE = 0, TC = +150°C – – 5.0 mA VBE = 4V, IC = 0 – – 1.0 mA Collector–Base Cutoff Current Emitter–Base Cutoff Current VCEO(sus) IC = 200mA, Note 1 ICBO IEBO Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 7.5A, VCE = 2V 25 – 100 Base–Emitter ON Voltage VBE(on) IC = 7.5A, VCE = 2V – – 1.3 V Collector–Emitter Saturation Voltage VCE(sat) IC = 7.5A, IB = 750mA – – 0.8 V Base–Emitter Saturation Voltage VBE(sat) IC = 7.5A, IB = 750mA – – 1.3 V 2.0 – – MHz Dynamic Characteristics Current Gain–Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and NTE181 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case