NTE182

NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 10A D High Current Gain−Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39°C/W Electrical Characteristics: (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 60 − − V Collector Cutoff Current ICEO VCE = 30V, IB = 0 − − 700 µA ICEX VCE = 70V, VBE(off) = 1.5V − − 1.0 mA VCE = 70V, VBE(off) = 1.5V, TC = +150°C − − 5.0 mA VCB = 70V, IE = 0 − − 1.0 mA VCB = 70V, IE = 0, TC = +150°C − − 10 mA VBE = 5V, IC = 0 − − 5.0 mA ICBO Emitter Cutoff Current IEBO Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 4A, VCE = 4V 20 − 100 IC = 10A, VCE = 4V 5.0 − − Base−Emitter ON Voltage VBE(on) IC = 4A, VCE = 4V − − 1.8 V Collector−Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 400mA − − 1.1 V IC = 10A, IB = 3.3A − − 8.0 V 2.0 − − MHz Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 500mA, VCE = 10V, f = 1MHz Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. .530 (13.4) Max .143 (3.65) Dia Thru .668 (17.0) Max E C B .655 (16.6) Max .166 (4.23) Heat Sink Contact Area (Bottom) C (Heat Sink Area) .150 (3.82) Max