NTE187

NTE186 (NPN) & NTE187 (PNP) Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/converters, and many other general purpose applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation, PT TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case for 10sec max), TL . . . . . . . . . . . . . . . +260°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol DC Current Gain hFE Test Conditions Min Typ Max VCE = 1V, IC = 200mA 100 – 220 VCE = 1V, IC = 2A 20 – – Unit Collector Saturation Voltage VCE(sat) IC = 1A, IB = 50mA – – 0.5 V Base Saturation Voltage VBE(sat) IC = 1A, IB = 100mA – – 1.3 V Collector Cutoff Current ICES VCE = 70V, TJ = +25°C – – 10 µA Emitter Cutoff Current IEBO VEB = 5V, TJ = +25°C – – 100 µA Collector Capacitance Ccbo VCB = 10V, f = 1MHz – – 100 pF Current Gain–Bandwidth Product fT VCE = 4V, IC = 20mA – 50 – MHz Delay Time td IC = 1A, IB1 = IB2 = 100mA – 100 – ns Rise Time tr – 100 – ns Storage Time ts – 500 – ns Fall Time tf 75 – – ns .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min B .100 (2.54) C E .100 (2.54)