NTE227

NTE227

  • 厂商:

    NTE

  • 封装:

    TO-237AA

  • 描述:

    TRANS NPN 300V 100MA TO237

  • 数据手册
  • 价格&库存
NTE227 数据手册
NTE227 Silicon NPN Transistor High Voltage Amp, Video Output Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation (TA = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW Power Dissipation (TCOLLECTOR LEAD = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Maximum Operating Junction Temperature, TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Thermal Resistance, Junction–to–Case (TCOLLECTOR LEAD = +25°C), RthJC . . . . . . . . . . . 62.5°C/W Thermal Resistance, Junction–to–Ambient (TA = +25°C), RthJA . . . . . . . . . . . . . . . . . . . . . . 147°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 260V – – 100 nA Emitter Cutoff Current IEBO VEB = 6V – – 100 nA DC Current Gain hFE IC = 1mA, VCE = 10V 25 – – IC = 10mA, VCE = 10V 40 90 200 Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA 300 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA 300 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA 6 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – 0.25 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – 0.74 1.0 V fT IC = 10mA 50 – 200 MHz VBE(sat) IC = 10mA – – 0.76 V – – 70 pF Transition Frequency Base–Emitter Saturation Voltage Capacitance Cib .200 (5.08) .180 (4.57) .100 (2.54) E B C .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R
NTE227 价格&库存

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