NTE2300

NTE2300 Silicon NPN Transistor High Voltage, Horizontal Output TO3 Type Package Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: D High Breakdown Voltage and High Reliability D High Switching Speed Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Collector Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 − − 10 μA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 1 mA DC Current Gain hFE VCE = 5V, IC = 1A 5 − − fT VCE = 10V, IC = 1A − 3 − MHz Collector−Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A − − 5.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A − − 1.5 V Current−Gain Bandwidth Product Collector−Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 1500 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = ∞ 800 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 200mA, IC = 0 7 − − V − − 0.4 μs Fall Time tf IC = 4A, IB1 = 0.8A, IB2 = −1.6A Rev. 4−11 .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47)