NTE2301

NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction D Safe Operating Area @ 50µs = 20A, 400V D Switching Times with Inductive Loads: tf = 0.4µs (Typ) @ IC = 4.5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Total Power Dissipation, PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . +275°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 750 – – V OFF Characteristics (Note 1) Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0 Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 1 mA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 1 mA IC = 4.5A, IB = 1.8A – – 5 V IC = 3.5A, IB = 1.5A – – 5 V IC = 4.5A, IB = 1.8A – – 1.5 V IC = 3.5A, IB = 1.5A – – 1.5 V IC = 100mA, VCE = 5V, ftest = 1MHz – 4 – MHz VCB = 10V, IE = 0, f = 0.1MHz – 125 – pF IC = 4.5A, IB1 = 1.8A, LB = 8µH – 0.4 1.0 µs IC = 4.5A, IB1 = 1.8A, LB = 8µH, TC = +100°C – 0.6 – µs ON Characteristics (Note 1) Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) Dynamic Characteristics Current Gain – Bandwidth Product fT Output Capacitance Cob Switching Characteristics Fall Time tf Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%. .060 (1.52) .600 (15.24) .173 (4.4) C .156 (3.96) Dia. B C .550 (13.97) .430 (10.92) E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners