NTE2304

NTE2304 Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: D Low Collector–Emitter Saturation Voltage D Wide ASO and Resistant to Breakdowns Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Allowable Collector Dissipation (TC = +25°C ), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 mA DC Current Gain hFE VCE = 2V, IC = 1A 100 – 200 VCE = 2V, IC = 8A 30 – – fT VCE = 5V, IC = 1A – 20 – MHz VCE(sat) IC = 8A, IB = 0.4A – 0.18 0.4 V Current Gain–Bandwidth Product Collector–Emitter Saturation Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CBO IC = 1mA, RBE = ∞ 50 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V – 0.2 – µs – 1.0 – µs – 0.1 – µs Turn–On Time ton Storage Time tstg Fall Time tf 10IB1 = –10IB2 = IC = 2A, PW = 20µs µ .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47)