NTE2317

NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington TO−3PN Type Package Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO−3PN type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performances in the linear region make this device particularly suitable for car ignitions where current limiting is achieved desaturing the darlington. Features: D High Performance Electronic Ignition Darlington D High Ruggedness Applications: D Automotive Market Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08C/W Rev. 2−15 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 450 − − V VCE = 500V, TJ = +125C VBE = 0, − − 1 mA − − 5 mA ICEO VCE = 450V, IB = 0 − − 1 mA IEBO IC = 0, VEB = 5V − − 50 mA OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 Collector Cutoff Current Emitter Cutoff Current ICES TJ = +25C ON Characteristics Collector−Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 150mA − − 1.8 V Base−Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 150mA − − 2.2 V DC Current Gain hFE IC = 5A, VCE = 10V 300 − − Diode Forward Voltage VF IF = 10A − − 2.8 .189 (4.8) .614 (15.6) .787 (20.0) .590 (15.0) .138 (3.5) Dia .889 (22.6) B .215 (5.45) C E V