NTE2325

NTE2325 Silicon NPN Transistor High Voltage Switch TO−220 Type Package Features: D High Reverse Voltage: VCBO = 900V (Max) D High Speed Switching: tf = 0.7s (Max) Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak Collector Current (Note 1), icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  10% Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 900 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =  800 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 7 − − V Collector Cutoff Current ICBO VCB = 800V, IE = 0 − − 10 A Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 10 A 800 − − V VCEX(sus)1 IC = 1A, IB1 = 200mA, IB2 = −200mA, L = 2mH, Clamped 800 − − V VCEX(sus)2 IC = 500mA, IB1 = 100mA, IB2 = −100mA, L = 5mH, Clamped 900 − − V Collector−Emitter Sustaining Voltage VCEO(sus) IC = 3A, L = 500H, IB = 1A Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE1 VCE = 5V, IC = 200mA 10 − − hFE2 VCE = 5V, IC = 1A 8 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 1.5A, IB = 300mA − − 2.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 1.5A, IB = 300mA − − 1.5 V fT VCE = 10V, IC = 200mA − 15 − MHz Cob VCB = 10V, f = 1MHz − 60 − pF Turn−On Time ton − 1.0 − s Storage Time tstg IC = 2A, IB1 = 400mA, IB2 = 800mA, RL = 200, VCC = 400V − 3.0 − s − 0.7 − s Dynamic Characteristics Current Gain−Bandwidth Product Output Capactiance Switching Characteristics Fall Time tf .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab