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NTE2335

NTE2335

  • 厂商:

    NTE

  • 封装:

    TO-3P-3

  • 描述:

    TRANS NPN 60V 5A TO3P

  • 数据手册
  • 价格&库存
NTE2335 数据手册
NTE2335 Silicon NPN Transistor Darlington w/Internal Zener Diode for Line Operated TV Features: D Excellent Wide Safe Operating Area D Included Avalanche Diode D High DC Current Gain Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±15V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±15V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 45 60 75 V Collector–Emitter Breakdown Voltage V(BR)CBO IC = 100mA, IB = 0 45 60 75 V – – 100 µA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 DC Current Gain hFE VCE = 5V, IC = 500mA 2000 VCE(sat) IC = 500mA, IB = 1mA – – 1.5 V IC = 1A, IB = 1mA – – 2.5 V VCE = 5V, IC = 500mA – – 1.8 V 80 – – W.sec Collector–Emitter Saturation Voltage Base–Emitter Voltage VBE Allowable Energy ET 20000 Schematic Diagram C B E .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47)
NTE2335 价格&库存

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