NTE2347

NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation, Ptot TA ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W TC ≤ +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICES IEBO Test Conditions Min Typ Max Unit VCE = 150V, VBE = 0 – – 1 mA VCE = 100V, VBE = 0 – – 1 µA VCE = 100V, VBE = 0, TC = +150°C – – 100 µA VEB = 6V, IC = 0 – – 1 mA Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 80 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA, Note 1 – – 1 V Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 500mA, Note 1 – – 1.6 V IC = 2A, VCE = 2V, Note 1 40 – 120 IC = 2A, VCE = 2V, TC = –55°C, Note 1 15 – – IC = 500mA, VCE = 5V 50 – – MHz VCB = 10V, IE = 0, f = 1MHz – – 80 pF DC Current Gain Transition Frequency Collector–Base Capacitance hFE fT CCBO Turn–On Time ton VCC = 20V, IC = 500mA, IB1 = 500mA – – 0.35 µs Storage Time ts VCC = 20V, IC = 5A, IB1 = –IB2 = 500mA – – 0.35 µs Fall Time tf – – 0.3 µs Note 1. Pulse Test: Pulse Duration = 300µs, Duty Cycle = 1.5%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)