NTE2376

NTE2376 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−247 Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 410mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, L = 683H, RG = 25, IAS = 30A Note 3. ISD  30A, di/dt  190A/s, VDD  V(BR)DSS, TJ  +150C Rev. 10−13 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Breakdown Voltage Temp. Coefficient V(BR)DSS Reference to +25C, ID = 1mA TJ Min Typ Max Unit 200 − − V − 0.27 − V/C − − 0.085  Static Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 18A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V VDS = 50V, ID = 18A, Note 4 12 − − mhos VDS = 200V, VGS = 0V − − 25 A VDS = 160V, VGS = 0V, TJ = +125C − − 250 A Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−to−Source Forward Leakage IGSS VGS = 20V − − 100 nA Gate−to−Source Reverse Leakage IGSS VGS = −20V − − −100 nA ID = 30A, VDS = 160V, VGS = 10V, Note 4 − − 140 nC − − 28 nC − − 74 nC − 16 − ns − 86 − ns td(off) − 70 − ns tf − 62 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 5.0 − nH − 13.0 − nH VGS = 0V, VDS = 25V, f = 1MHz − 2800 − pF Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VDD = 100V, ID = 30A, RG = 6.2, RD = 3.2, Note 4 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 780 − pF Reverse Transfer Capaticance Crss − 250 − pF Min Typ Max Unit − − 30 A Source−Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Pulsed Source Current (Body Diode) ISM Note 1 − − 120 A Diode Forward Voltage VSD TJ = +25C, IS = 30A, VGS = 0V, Note 4 − − 2.0 V Reverse Recovery Time trr − 360 540 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 30A, di/dt = 100A/s, Note 4 − 4.6 6.9 C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width  300s; duty cycle  2%. .626 (15.9) Max .197 (5.0) .217 (5.5) See Note .787 (20.0) .143 (3.65) Dia Max .157 (4.0) .559 (14.2) Min .047 (1.2) .215 (5.45) G D .094 (2.4) S TO−247 Note: Drain connected to metal part of mounting surface.