NTE2387

NTE2387 MOSFET N−Channel Enhancement Mode, High Speed Switch TO−220 Type Package Description: The NTE2387 is an N−Channel Enhancement Mode Power MOSFET in a TO−220 type package designed with the best combination of fast switching, ruggedized device design, low on−resistance, and cost−effectiveness. D Features: D Dynamic dV/dt rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A Maximum Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, L = 29mH, RG = 25, IAS = 4.1A Note 3. ISD  4.1A, di/dt  100A/s, VDD  600V, TJ  +150C Rev. 9−19 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 800 − − V Static Characteristics Drain−Source Breakdown Voltage V(BR)DSS ID = 250A, VGS = 0 VDS Temperature Coefficient DVDS/TJ Reference to +25C, ID = 1mA − 0.9 − V/C VGS = 0, VDS = 800V − − 100 A VGS = 0, VDS = 640V, TJ = +125C − − 500 A VGS = ±20V − − ±100 nA 2.0 − 4.0 V Zero−Gate Voltage Drain Current IDSS Gate−Sourcwe Leakage Current IGSS Gate−Source Threshold Voltage VGS(th) VDS = VGS, ID = 250A Drain−Source On−State Resistance RDS(on) VGS = 10V, ID = 2.5A, Note 4 − − 3.0  gfs VDS = 100V, ID = 2.5A, Note 4 2.5 − − S Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 1300 − pf Output Capacitance Coss − 310 − pf Reverse Transfer Capacitance Crss − 190 − pf Total Gate Charge Qg − − 78 nC Gate−Source Charge Qgs − − 9.6 nC Gate−Drain Charge Qgd − − 45 nC Turn−On Delay Time td(on) − 12 − ns − 33 − ns td(off) − 82 − ns tf − 30 − ns Forward Transconductance Dynamic Characteristics Rise Time Turn−Off Delay Time Fall Time tr VDS = 400V, VGS = 10V, ID = 4.1A, Note 4 VDD = 400V, ID = 4.1A, RD = 95, Rg = 12, Note 4 Internal Drain Inductance LD Measured from drain lead 6mm from package to center of die − 4.5 − nH Internal Source Inductance LS Measured from drain lead 6mm from package to center of die − 7.5 − nH − − 4.1 A Drain−Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Note 1 − − 16 A Body Diode Voltage VSD TJ = +25C, IS = 4.1A, VGS = 0, Note 1 − − 1.8 V TJ = +25C, IF = 4.1A, dI/dt = 100A/s, Note 4 − 480 720 ns − 1.8 2.7 C Reverse Recovery Time trr Reverse Recovered Charge Qrr Forward Turn−On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse Width  300s, Duty Cycle  2%. .420 (10.67) Max .110 (2.79) .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate Source .100 (2.54) Drain/Tab