NTE2388

NTE2388 MOSFET N−Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. D Features: D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize On−Losses. Specified at Elevated Temperatures. D Rugged − SOA is Power Dissipation Limited D Source−to−Drain Diode Characterized for Use With Inductive Loads G S Absolute Maximum Ratings: Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain−Gate Voltage (RGS = 20k+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current, ID Continuous TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Peak TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/5C Maximum Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W Maximum Lead Temperature (During soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . +3005C Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 200 − − V VGS = 0, VDS = Max Rating − − 200 .A VGS = 0, VDS = 160V, TC = +1255C − − 1000 .A OFF Characteristics Drain−Source Breakdown Voltage Zero−Gate Voltage Drain Current V(BR)DSS ID = 250.A, VGS = 0 IDSS Gate−Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V − − 100 nA Gate−Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V − − 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250.A 2 − 4 V Static Drain−Source On Resistance RDS(on) VGS = 10V, ID = 10A − − 0.18 + VGS = 10V, VDS . 3.2V 18 − − A gfs VDS . 3.2V, ID = 10A 6 − − mhos Input Capactiance Ciss − − 1600 pf Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz − − 750 pf Reverse Transfer Capactiance Crss − − 300 pf − − 30 ns − − 60 ns td(off) − − 80 ns tf − − 60 ns − 38 60 nC − 16 − nC − 22 − nC − 1.8 2.0 V ON Characteristics (Note 1) On−State Drain Current Forward Transconductance ID(on) Dynamic Characteristics Switching Characteristics (Note 1) Turn−On Time Rise Time Turn−Off Delay Time Fall Time td(on) tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd VDD [ 75V, ID = 10APEAK, Rg = 4.7+ VDS = 160V, VGS = 10V, ID = Rated ID Source Drain Diode Characteristics (Note 1) Forward ON Voltage VSD Forward Turn−On Time ton Reverse Recovery Time trr IS = Rated ID, VGS = 0 Limited by stray inductance − 450 − ns Measured from the contact screw on tab to center of die − 3.5 − nH Measured from the drain lead 0.25” from package to center of die − 4.5 − nH Measured from the source lead 0.25” from package to source bond pad − 7.5 − nH Internal Package Inductance Internal Drain Inductance Internal Source Inductance Ld Ls Note 1. Pulse test: Pulse width 3 300.s, Duty cycle 3 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab