NTE2389

NTE2389 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Type Package Absolute Maximum Ratings: (TA = +25mC unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . W30V Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175mC Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55m to +175mC Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mC/W Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mC/W Electrical Characteristics: (TA = +25mC unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Ratings Drain−Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0 60 − − V Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 2.1 3.0 4.0 V TJ = +25mC − 1 10 mA TJ = +125mC − 0.1 1.0 mA VGS = W30V, VDS = 0 − 10 100 nA RDS(on) ID = 20A, VGS = 10V − 40 45 mW − mhos Zero Gate Voltage Drain Current Gate−Source Leakage Current Drain−Source On−State Resistance IDSS IGSS VDS = 60V, VGS = 0 Dynamic Ratings Forward Transconductance gfs ID = 20A, VDS = 25V 8 13.5 Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 1650 2000 pF Output Capacitance Coss − 560 750 pF Reverse Transfer Capacitance Crss − 300 400 pF Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +25mC unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 25 40 ns − 60 90 ns td (off) − 125 160 ns tf − 100 130 ns Measured from contact screw on tab to center of die − 3.5 − nH Measured from drain lead 6mm from package to center of die − 4.5 − nH Measured from source lead 6mm from package to source bond pad − 7.5 − nH IDR − − 41 A Pulsed Reverse Drain Current IDRM − − 164 A Diode Forward On−Voltage VSD IF = 41A, VGS = 0 − 1.4 2.0 V IF = 41A, VGS = 0, VR = 30V −diF/dt = 100A/ms − 60 − ns − 0.3 − mC Dynamic Ratings (Cont’d) Turn−On Time td (on) tr Turn−Off Time Internal Drain Inductance Ld Internal Source Inductance Ls VCC = 30V, VGS = 10V, ID = 3A, RGS = 50W Reverse Diode Continuous Reverse Drain Current Reverse Recovery Time trr Reverse Recovery Charge Qrr D .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Gate .100 (2.54) .500 (12.7) Min Source Drain/Tab G S