NTE2392

NTE2392 MOSFET N−Channel Enhancement Mode, High Speed Switch TO3 Type Package Description: The NTE2392 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability D Case G S Absolute Maximum Ratings: Drain−Source Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain−Gate Voltage (RGS = 20kNote 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Pulsed Drain Current (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Clamped Inductive Current (L = 100H), ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Total Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), TL . . . . . . . . . . +300C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83C/W Typical Thermal Resistance, Case−to−Sink (Note 4), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W Note Note Note Note 1. 2. 3. 4. TJ = +25 to +150C Pulse test: Pulse Width  300s, Duty Cycle  2%. Repetitive Rating: Pulse width limited by maximum junction temperature. Mounting surface flat, smooth, and greased. Rev. 12−18 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Zero−Gate Voltage Drain Current Gate−Body Leakage Current Symbol Min Typ Max Unit 100 − − V VGS = 0, VDS = 100V − − 250 A VGS = 0, VDS = 80V, TC = +125C − − 1000 A VDS = 0, VGS = 20V − − 100 nA VDS = VGS, ID = 250A 2 − 4 V VDS > ID(on) x RDS(on) max, VGS = 10V, Note 2 40 − − A VGS = 10V, ID = 20A, Note 2 − 0.045 0.055 W V(BR)DSS ID = 250A, VGS = 0 IDSS IGSS Gate Threshold Voltage VGS(th) On−State Drain Current ID(on) Static Drain−Source On Resistance Test Conditions RDS(on) Forward Transconductance gfs VDS > ID(on) x RDS(on) max, ID = 20A, Note 2 9 11 − mho Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 2000 3000 pf Output Capacitance Coss − 1000 1500 pf Reverse Transfer Capacitance Crss − 350 500 pf Turn−On Time td(on) − − 35 ns tr − − 100 ns td(off) − − 125 ns tf − − 100 ns − 63 120 nC − 27 − nC − 36 − nC Rise Time Turn−Off Delay Time Fall Time VDD = 24V, ID = 20A, RI = 4.7 Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain (“Miller”) Charge Qgd Internal Drain Inductance LD Measured between the contact screw on header that is closer to source and gate pins and center of die − 5.0 − nH Internal Source Inductance LS Measured from the source pin, 6mm (.25 in.) from header − 12.5 − nH − − 40 A VGS = 10V, ID = 50A, VDS = 80V Source−Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode) IS Pulsed Source Current (Body Diode) ISM Note 3 − − 160 A Forward ON Voltage VSD IS = 40A, VGS = 0, TJ = +25C, Note 3 − − 2.5 V IF = 40A, diF/dt = 100A/s, TJ = +150C − 600 − ns − 3.3 − C Reverse Recovery Time trr Reverse Recovered Charge Qrr Note 2. Pulse test: Pulse Width  300s, Duty Cycle  2%. Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Source .063 (1.6) Max 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case