NTE2394

NTE2394 MOSFET N−Channel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2394 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 450V for Off−Line SMPS D High Current: 12A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls D G S Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0, Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20V Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Clamped Drain Inductive Current (L = 100H), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Continuous Drain Current, ID TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8A Total Dissipation (TC = +25 C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44W/ C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150 C Note 1. TJ = +25 to +125 C Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Rev. 10−13 Thermal Data: Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69 C/W Typical Thermal Resistance, Case−to−Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30 C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300 C Electrical Characteristics: (TC = +25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 500 − − V VGS = 0, VDS = Max Rating − − 250 A VGS = 0, VDS = 400V, TC = +125 C − − 1000 A VDS = 0, VGS =  20V − −  500 nA VDS = VGS, ID = 250A 2 − 4 V VDS > ID(on) x RDS(on) max, VGS = 10V 14 − − A VGS = 10V, ID = 7.9A − − 0.4  9.3 − − mho − − 3000 pf − − 600 pf − − 200 pf − − 35 ns − − 50 ns td(off) − − 150 ns tf − − 70 ns − − 120 nC − − 14 A OFF Characteristics Drain−Source Breakdown Voltage V(BR)DSS ID = 250A, VGS = 0 Zero−Gate Voltage Drain Current Gate−Body Leakage Current IDSS IGSS ON Characteristics (Note 3) Gate Threshold Voltage VGS(th) On−State Drain Current ID(on) Static Drain−Source On Resistance RDS(on) Dynamic Characteristics Forward Transconductance gfs VDS > ID(on) x RDS(on) max, ID = 7.9A, Note 4 Input Capacitance Ciss Output Capacitance Coss VDS = 25V, VGS = 0, f = 1MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn−On Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge td(on) tr Qg VDD = 210V, ID = 7.0A, RI = 4.7 VGS = 10V, ID = 13A, VDS = 400V Source Drain Diode Characteristics Source−Drain Current ISD Source−Drain Current (Pulsed) ISDM Note 3 − − 56 A Forward ON Voltage VSD ISD = 14A, VGS = 0 − − 1.4 V IDS = 14A, di/dt = 100A/s, TJ = +150 C − 1300 − ns − 7.4 − C Reverse Recovery Time trr Reverse Recovered Charge Qrr Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulsed: Pulse Duration = 300s, Duty Cycle 1.5% .190 (4.82) .615 (15.62) D .787 (20.0) .591 (15.02) .787 (20.0) .126 (3.22) Dia G D S .215 (5.47)